IndiumV3, Main, Repository, bibRecord, 00D839

Crystallization of isolated amorphous zones in semiconductors

Identifieur interne : 00D839 ( Main/Repository ); précédent : 00D838; suivant : 00D840

Crystallization of isolated amorphous zones in semiconductors

Auteurs : RBID : Pascal:03-0354105

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Etat amorphe, Semiconducteur, Silicium, Germanium, Gallium arséniure, Gallium phosphure, Indium phosphure, Recuit thermique, Effet physique rayonnement, Faisceau électron, Faisceau photon, Faisceau laser, Rayonnement UV, Cristallisation, Cinétique, InP, As Ga, Ga P, In P, 8110J, 6180B, 6180F, Ge, Si, GaAs, GaP.

English descriptors

KwdEn :
- Amorphous state, Crystallization, Electron beams, Experimental study, Gallium arsenides, Gallium phosphides, Germanium, Indium phosphides, Kinetics, Laser beams, Photon beams, Physical radiation effects, Semiconductor materials, Silicon, Thermal annealing, Ultraviolet radiation.

Abstract

Thermal annealing, irradiation with electrons (25-300keV), and irradiation with photons (hν= 2.33-3.88 eV) have been used to stimulate the crystallization of isolated amorphous zones in Si, Ge, GaAs, GaP and InP. Transmission electron microscopy and computer image analysis were used to determine the crystallization processes. For all materials, thermally stimulated crystallization occurred only at temperatures above 373 K. The electron-stimulated crystallization rate is sensitive to the electron energy. Initially, the rate decreases with increasing energy until it reaches a minimum at about one half the threshold displacement energy and then it increases. It is insensitive to the irradiation temperature between 90 and 300 K and to the crystal orientation. The effective diameter of the amorphous zone initially shrinks linearly with increasing electron dose. For the laser-induced crystallization experiments the crystallization rate in Si, but not in Ge, was sensitive to the temperature, with a faster rate occurring at 300 K than at 90 K. The photon and electron stimulated crystallization results indicate that a non-displacive mechanism causes bond breakage at the amorphous-crystalline interlace. The re-formation of these interfacial bonds is responsible for the amorphous-to-crystalline transition.

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Pascal:03-0354105

Le document en format XML

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<author><name sortKey="Jencic, I" uniqKey="Jencic I">I. Jencic</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Jozef Stefan Institute, Jamova 39</s1>
<s2>1000 Ljubljana</s2>
<s3>SVN</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Slovénie</country>
<wicri:noRegion>1000 Ljubljana</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Hollar, E P" uniqKey="Hollar E">E. P. Hollar</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering. University of Illinois, 1304 West Green Street</s1>
<s2>Urbana, Illinois 61801</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Urbana, Illinois 61801</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Robertson, I M" uniqKey="Robertson I">I. M. Robertson</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering. University of Illinois, 1304 West Green Street</s1>
<s2>Urbana, Illinois 61801</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Urbana, Illinois 61801</wicri:noRegion>
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<publicationStmt><idno type="inist">03-0354105</idno>
<date when="2003">2003</date>
<idno type="stanalyst">PASCAL 03-0354105 INIST</idno>
<idno type="RBID">Pascal:03-0354105</idno>
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<seriesStmt><idno type="ISSN">1478-6435</idno>
<title level="j" type="abbreviated">Philos. mag. : (2003, Print)</title>
<title level="j" type="main">Philosophical magazine : (2003. Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous state</term>
<term>Crystallization</term>
<term>Electron beams</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Gallium phosphides</term>
<term>Germanium</term>
<term>Indium phosphides</term>
<term>Kinetics</term>
<term>Laser beams</term>
<term>Photon beams</term>
<term>Physical radiation effects</term>
<term>Semiconductor materials</term>
<term>Silicon</term>
<term>Thermal annealing</term>
<term>Ultraviolet radiation</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Etat amorphe</term>
<term>Semiconducteur</term>
<term>Silicium</term>
<term>Germanium</term>
<term>Gallium arséniure</term>
<term>Gallium phosphure</term>
<term>Indium phosphure</term>
<term>Recuit thermique</term>
<term>Effet physique rayonnement</term>
<term>Faisceau électron</term>
<term>Faisceau photon</term>
<term>Faisceau laser</term>
<term>Rayonnement UV</term>
<term>Cristallisation</term>
<term>Cinétique</term>
<term>InP</term>
<term>As Ga</term>
<term>Ga P</term>
<term>In P</term>
<term>8110J</term>
<term>6180B</term>
<term>6180F</term>
<term>Ge</term>
<term>Si</term>
<term>GaAs</term>
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<front><div type="abstract" xml:lang="en">Thermal annealing, irradiation with electrons (25-300keV), and irradiation with photons (hν= 2.33-3.88 eV) have been used to stimulate the crystallization of isolated amorphous zones in Si, Ge, GaAs, GaP and InP. Transmission electron microscopy and computer image analysis were used to determine the crystallization processes. For all materials, thermally stimulated crystallization occurred only at temperatures above 373 K. The electron-stimulated crystallization rate is sensitive to the electron energy. Initially, the rate decreases with increasing energy until it reaches a minimum at about one half the threshold displacement energy and then it increases. It is insensitive to the irradiation temperature between 90 and 300 K and to the crystal orientation. The effective diameter of the amorphous zone initially shrinks linearly with increasing electron dose. For the laser-induced crystallization experiments the crystallization rate in Si, but not in Ge, was sensitive to the temperature, with a faster rate occurring at 300 K than at 90 K. The photon and electron stimulated crystallization results indicate that a non-displacive mechanism causes bond breakage at the amorphous-crystalline interlace. The re-formation of these interfacial bonds is responsible for the amorphous-to-crystalline transition.</div>
</front>
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<fA14 i1="01"><s1>Jozef Stefan Institute, Jamova 39</s1>
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<sZ>1 aut.</sZ>
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<fA14 i1="02"><s1>Department of Materials Science and Engineering. University of Illinois, 1304 West Green Street</s1>
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<s3>USA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Thermal annealing, irradiation with electrons (25-300keV), and irradiation with photons (hν= 2.33-3.88 eV) have been used to stimulate the crystallization of isolated amorphous zones in Si, Ge, GaAs, GaP and InP. Transmission electron microscopy and computer image analysis were used to determine the crystallization processes. For all materials, thermally stimulated crystallization occurred only at temperatures above 373 K. The electron-stimulated crystallization rate is sensitive to the electron energy. Initially, the rate decreases with increasing energy until it reaches a minimum at about one half the threshold displacement energy and then it increases. It is insensitive to the irradiation temperature between 90 and 300 K and to the crystal orientation. The effective diameter of the amorphous zone initially shrinks linearly with increasing electron dose. For the laser-induced crystallization experiments the crystallization rate in Si, but not in Ge, was sensitive to the temperature, with a faster rate occurring at 300 K than at 90 K. The photon and electron stimulated crystallization results indicate that a non-displacive mechanism causes bond breakage at the amorphous-crystalline interlace. The re-formation of these interfacial bonds is responsible for the amorphous-to-crystalline transition.</s0>
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<s5>06</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>16</s5>
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<s5>16</s5>
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<s5>17</s5>
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<fC03 i1="16" i2="3" l="ENG"><s0>Kinetics</s0>
<s5>17</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>52</s5>
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<fC03 i1="18" i2="3" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
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<s4>INC</s4>
<s5>54</s5>
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<s4>INC</s4>
<s5>55</s5>
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<fC03 i1="21" i2="3" l="FRE"><s0>8110J</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
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<fC03 i1="22" i2="3" l="FRE"><s0>6180B</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
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<fC03 i1="23" i2="3" l="FRE"><s0>6180F</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>58</s5>
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<fC03 i1="24" i2="3" l="FRE"><s0>Ge</s0>
<s4>INC</s4>
<s5>92</s5>
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<s4>INC</s4>
<s5>93</s5>
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<s4>INC</s4>
<s5>94</s5>
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Crystallization of isolated amorphous zones in semiconductors

Crystallization of isolated amorphous zones in semiconductors

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri